High-voltage switching diode

High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. • High switching speed: trr ≤ 50 ns\n• Low leakage current: IR ≤ 100 nA\n• High reverse voltage VR ≤ 200 V\n• Low capacitance: Cd ≤ 2 pF\n• Very small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

General purpose diode

1. General description General purpose diode fabricated in planar technology and encapsulated in a very small SOD323 (SC-76) plastic package. 2. Features and benefits • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V

文件：202.32 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：225.47 Kbytes 页数：4 Pages

MICRO-ELECTRONICS

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS

THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS.

文件：164.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司