BAS316SLASHDG

High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve

BAS316-TP

LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation)

BAS316WS

HighSpeedSwitchingDiode

HighSpeedSwitchingDiode Applications •High-speedswitching

BAS316WS

200mW,High-speedswitchingSMDDiode

FEATURES -Fastswitchingdevice(trr

BAS316WS

0.25A,100VSurfaceMountSmallSignalSwitchingDiode

FEATURES •Highswitchingspeed:max.4ns •UltrasmallplasticSMDpackage. •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V APPLICATINS •High-speedswitchingine.g.surfacemountedcircuits.

BAS316WS

SMDSmallSignalDiodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Rectifying Commercialgrade1) MechanicalData1) Tapedandreeled3000

BAS316WS

200mWHigh-SpeedSwitchingSMDDiode

BAS316WS

SiliconEpitaxialPlanarSwitchingDiode

Applications •High-speedswitching

BAS316WS-AQ

SMDSmallSignalDiodesSMDKleinsignal-Dioden

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1)

BAS316WS-CAR

SiliconEpitaxialPlanarSwitchingDiode

Applications •High-speedswitching •-CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPcapable