BAS3020B中文资料肖特基二极管数据手册Infineon规格书

描述 Description

Schottky Rectifier Diode.

特性 Features

·Reverse voltage: 30 V
·Forward current: 2 A
·Low forward voltage: 0.53 V typ. @ 2 A
·Low leakage current 40 μA typ. @ 30 V
·Low capacitance: 30 pF typ. @ 5 V
·High ESD / transient robustness according to:ESD (HBM): Class 3 B (> 8000 V),ESD (MM): Class C ( > 400 V),ISO7637-2: Pulse 1 ( -100 V, 2 ms),Pulse 2 (-300 V, 50 μs),Pulse 3 (-400 V, 100 ns)
·For high efficiency DC/DC conversion, fast switching, polarity protection, rectification and clamping applications
·Very small SMD package (2.0 x 1.25 x 0.9 mm≥) with improved operating temperature range due to extra-low thermal resistance design see attached Forward current curves)
·Ideal to replace SMA packages with significant size advantage
·Pb-free (RoHS compliant) package
·Qualified according AEC Q101

简介

BAS3020B属于分立半导体产品的二极管-整流器-单。由制造生产的BAS3020B二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。