BAV103

500mWHermeticallySealedGlassHighVoltageSwitchingDiodes

Features ●—HighVoltageSwitchingDevice —●MiniMelfpackage —●Surfacedevicetypemounting —●Hermeticallysealedglass —●Compressionbondedconstruction —●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable —●RoHScompliant —●MatteTin(Sn

BAV103

HighVoltage,GeneralPurposeDiode

Features ●SiliconEpitaxialPlanarDiodes ●Forgeneralpurpose

BAV103

SmallSignalSwitchingDiodes,HighVoltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

BAV103

SuperfastSwitchingSurfaceMountSi-Diodes

BAV103

HIGHSPEEDSWITCHINGDIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

BAV103

Singlegeneral-purposeswitchingdiodes

ETC

BAV103

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

BAV103

SmallSignalDiodes

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ​​​​​​​•MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi

BAV103

SmallSignalSwitchingDiodes,HighVoltage

BAV103

SMALLSIGNALSWITCHINGDIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams