BAR81W数据手册分立半导体产品的二极管-射频规格书PDF

描述 Description

This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications.

特性 Features

• Optimized for short - open transformation using λ/4 transmission lines
• Reduced impact of parasitic inductance due to design
• High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz
• Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR = 0 V and frequency f = 1 GHz
• Charge carrier lifetime τ = 80 ns (typical)
• Industry standard SOT343 package (2.0 mm xm 2.1 mm x 0.9 mm)
• Pb-free, RoHS compliant and halogen-free

优势:

应用 Application

Optimized for low bias current RF and high-speed interface switches in:
• Wireless Communications
• High Speed Data Networks

简介

BAR81W属于分立半导体产品的二极管-射频。由制造生产的BAR81W二极管 - 射频射频二极管是一种双端子半导体器件，只允许一个方向通过电流，而限制反方向的电流。该系列器件用于射频匹配电路以进行电子调谐。二极管类型包括 PIN 型、肖特基型和标准型，反向电压范围为 1 至 15,000 V，电流范围为 10 mA 至 20A。