丝印：PSs；Package：SOT-323；Silicon PIN Diode

Silicon PIN Diodes • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 3 GHz • Low resistance and long carrier lifetime • Very low capacitance at zero volts reverse bias at frequencies above 1 GHz • Very low signal distortion

文件：494.53 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：PSs；Package：SOT-323；High voltage current controlled RF resistor for RF attenuator and switches

Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.17 pF) • Low forward resistance (typ. 2.1 Ω @ 10 mA) • Very low signal d

文件：1.01163 Mbytes 页数：16 Pages

INFINEON

英飞凌

Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)

Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • For frequencies up to 3 GHz

文件：48.74 Kbytes 页数：4 Pages

SIEMENS

西门子

High voltage current controlled RF resistor for RF attenuator and switches

Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.17 pF) • Low forward resistance (typ. 2.1 Ω @ 10 mA) • Very low signal d

文件：1.01163 Mbytes 页数：16 Pages

INFINEON

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丝印：PSs；Package：SOT-323；Silicon PIN Diode

文件：1.05707 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：PSs；Package：SOT-323；Silicon PIN Diode

文件：1.05707 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：PSs；Package：SOT-323；Silicon PIN Diode

文件：269.71 Kbytes 页数：16 Pages

INFINEON

英飞凌

丝印：PSs；Package：SOT-323；Silicon PIN Diode

文件：1.05707 Mbytes 页数：15 Pages

INFINEON

英飞凌

射频PIN型二极管

This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels.\n Its low forward resistance, low capacitance and low inductance simplify design-in and support designers in creating versatile endsolutions. • Very low capacitance C = 0.25 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz\n• Low forward resistance RF = 2.6 Ω (typical) at forward current IF = 10 mA and frequency f = 2.5 GHz\n• Low signal distortion\n• Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)\n• Pb-free, RoHS c;

Infineon

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