丝印：PPs；Package：SOT-23；Silicon PIN Diode

Silicon PIN Diodes • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 3 GHz • Low resistance and long carrier lifetime • Very low capacitance at zero volts reverse bias at frequencies above 1 GHz • Very low signal distortion

文件：494.53 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：PPs；Package：SOT-23；High voltage current controlled RF resistor for RF attenuator and switches

Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.17 pF) • Low forward resistance (typ. 2.1 Ω @ 10 mA) • Very low signal d

文件：1.01163 Mbytes 页数：16 Pages

Infineon

英飞凌

Silicon PIN Diode

Features ● High voltage current controlled ● RF resistor for RF attenuator and swirches ● Freqency range above 1 MHz ● Low resistance and short carrier lifetime ● For frequencies up to 3 GHz

文件：41.33 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)

Silicon PIN Diode ● High voltage current controlled ● RF resistor for RF attenuator and swirches ● Freqency range above 1 MHz ● Low resistance and short carrier lifetime ● For frequencies up to 3 GHz

文件：89.48 Kbytes 页数：4 Pages

SIEMENS

西门子

PIN Diodes

文件：1.72559 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：PPs；Package：SOT-23；Silicon PIN Diode

文件：1.05707 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：PPs；Package：SOT-23；Silicon PIN Diode

文件：1.05707 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：PPs；Package：SOT-23；Silicon PIN Diode

文件：1.05707 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：PPs；Package：SOT-23；Silicon PIN Diode

文件：269.71 Kbytes 页数：16 Pages

Infineon

英飞凌

射频PIN型二极管

This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels.\n Its low forward resistance, low capacitance and low inductance simplify design-in and support designers in creating versatile endsolutions. • Very low capacitance C = 0.22 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 Ghz\n• Low forward resistance RF = 2.5 Ω (typical) at forward current IF = 10 mA and frequency f = 1 GHz\n• Low signal distortion\n• Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)\n• Pb-free, RoHS comp;

Infineon

英飞凌