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丝印：PPs；Package：SOT-23；High voltage current controlled RF resistor for RF attenuator and switches

SiliconPINDiode •HighvoltagecurrentcontrolledRFresistorforRFattenuatorandswitches •Frequencyrangeabove1MHzupto6GHz •Verylowcapacitanceatzerovoltreversebiasatfrequenciesabove1GHz(typ.0.17pF) •Lowforwardresistance(typ.2.1Ω@10mA) •Verylowsignald

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丝印：PPs；Package：SOT-23；Silicon PIN Diode

SiliconPINDiodes •HighvoltagecurrentcontrolledRFresistorforRFattenuatorandswitches •Frequencyrangeabove1MHzupto3GHz •Lowresistanceandlongcarrierlifetime •Verylowcapacitanceatzerovoltsreversebiasatfrequenciesabove1GHz •Verylowsignaldistortion

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Silicon PIN Diode

Features ●Highvoltagecurrentcontrolled ●RFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz

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Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)

SiliconPINDiode ●Highvoltagecurrentcontrolled ●RFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz

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射频PIN型二极管; • Very low capacitance C = 0.22 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 Ghz\n• Low forward resistance RF = 2.5 Ω (typical) at forward current IF = 10 mA and frequency f = 1 GHz\n• Low signal distortion\n• Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)\n• Pb-free, RoHS compliant and halogen-free\n\n优势:\n;

This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels.\n Its low forward resistance, low capacitance and low inductance simplify design-in and support designers in creating versatile endsolutions.\n

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丝印：PPs；Package：SOT-23；Silicon PIN Diode

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丝印：PPs；Package：SOT-23；Silicon PIN Diode

BAR64-04

丝印：PPs；Package：SOT-23；Silicon PIN Diode

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PIN Diodes

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丝印：PPs；Package：SOT-23；Silicon PIN Diode