RF PIN Diodes - Dual, Series in SOT-323

Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica

文件：127.48 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF PIN Diodes - Dual, Series in SOT-323

Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica

文件：127.48 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF PIN Diodes - Dual, Series in SOT-323

Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica

文件：127.48 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF PIN Diodes - Dual, Series in SOT-23

Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applicat

文件：116.19 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司