RF PIN Diode - Single in SOT-323

Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica

文件：131.87 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF PIN Diode - Single in SOT-323

Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica

文件：131.87 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF PIN Diode - Single in SOT-323

Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applica

文件：131.87 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

RF PIN Diode - Single in SOT-323

Vishay

威世