BAR63-05中文资料射频PIN型二极管数据手册Infineon规格书

描述 Description

This Infineon RF PIN diodes provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low forward resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end-solutions.

特性 Features

• Low capacitance C = 0.33 pF (typical) at voltage VR = 0 V and frequency f ≥ 1 GHz
• Low forward resistance RF = 2.1 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
• Charge carrier lifetime τ = 75 ns (typical)
• Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)
• Pb-free, RoHS compliant and halogen-free

优势:

应用 Application

Optimized for low bias current RF and high-speed interface switches in:
• Wireless communications
• High speed data networks