12 AMP PR4 DIODE CELLS

文件：233.16 Kbytes 页数：1 Pages

DEC

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：113.99 Kbytes 页数：16 Pages

PHI

PHI

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：113.99 Kbytes 页数：16 Pages

PHI

PHI

Appliance inlet for low voltage, Snap-in Mounting, Front Side, Solder or Quick-connect Terminal

文件：308.97 Kbytes 页数：3 Pages

SCHURTER

硕特

RF Coated Chokes (Axial Leads)

文件：144.92 Kbytes 页数：2 Pages

FRONTIER

Appliance inlet for low voltage, Snap-in Mounting, Front Side, Solder or Quick-connect Terminal

文件：266.2 Kbytes 页数：2 Pages

SCHURTER

硕特