Silicon PIN diode

DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package. FEATURES • High voltage, current controlled • RF resistor for RF switches • Low diode capacitance • Low diode forward resistance (low loss) • Very low series inductance. APPLICATIONS • RF attenuators and switches •

文件：69.85 Kbytes 页数：8 Pages

PHI

飞利浦

Silicon PIN diode

DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package. FEATURES • High voltage, current controlled • RF resistor for RF switches • Low diode capacitance • Low diode forward resistance (low loss) • Very low series inductance. APPLICATIONS • RF attenuators and switc

文件：108.49 Kbytes 页数：2 Pages

LRC

乐山无线电

Silicon PIN diode

General description Planar PIN diode in a SOD523 ultra small SMD plastic package Features and benefits • High voltage, current controlled • RF resistor for RF switches • Low diode capacitance • Low diode forward resistance • Very low series inductance • AEC-Q101 qualified Applications •

文件：243.21 Kbytes 页数：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon PIN diode

DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package. FEATURES • High voltage, current controlled • RF resistor for RF switches • Low diode capacitance • Low diode forward resistance (low loss) • Very low series inductance. APPLICATIONS • RF attenuators and switc

文件：168.54 Kbytes 页数：2 Pages

ETL

亚历电子

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon PIN diode

文件：77.52 Kbytes 页数：7 Pages

PHI

飞利浦