Automotive Excellent EMI Characteristics Ground Sense Operational Amplifiers

General Description BA82904Yxxx-C and BA82902Yxxx-C are high-gain, ground sense input Op-Amps. These ICs are monolithic ICs integrated dual or quad independent Op-Amps on a single chip. These Op-Amps have some features of low power consumption, and can operate from 3V to 36V (single power supply)

文件：3.50247 Mbytes 页数：38 Pages

ROHM

罗姆

Automotive Excellent EMI Characteristics Ground Sense Operational Amplifiers

General Description BA82904Yxxx-C and BA82902Yxxx-C are high-gain, ground sense input Op-Amps. These ICs are monolithic ICs integrated dual or quad independent Op-Amps on a single chip. These Op-Amps have some features of low power consumption, and can operate from 3V to 36V (single power supply)

文件：3.50247 Mbytes 页数：38 Pages

ROHM

罗姆

EMARMOUR™ 车载用 高EMI耐受力 接地检测运算放大器

BA82902YFV-C是将高增益且接地检测输入独立的运算放大器以4个电路集成于1枚芯片的单片IC。工作范围宽达3V～36V(单一电源工作时)，且消耗电流低，适用于引擎控制单元、EPS、ABS等所有车载应用。不仅如此，还具有出色的EMI耐受力，可轻松替换现有产品，EMI设计也更容易。 • AEC-Q100 Qualified(Grade 1)\n• Single or Dual Power Supply Operation\n• Wide Operating Supply Voltage\n• Standard Op-Amp Pin-assignments\n• Common-mode Input Voltage Range includes Ground Level, allowing Direct Ground Sensing\n• Low Supply Current\n• High Open Loop Voltage Gain\n• Internal ESD Pro;

ROHM

罗姆

Automotive Excellent EMI Characteristics Ground Sense Operational Amplifiers

General Description BA82904Yxxx-C and BA82902Yxxx-C are high-gain, ground sense input Op-Amps. These ICs are monolithic ICs integrated dual or quad independent Op-Amps on a single chip. These Op-Amps have some features of low power consumption, and can operate from 3V to 36V (single power supply)

文件：3.50247 Mbytes 页数：38 Pages

ROHM

罗姆

4B3T Second Gen Modular ISDN NT

文件：3.33052 Mbytes 页数：205 Pages

Infineon

英飞凌

TPSM82902, 2-A, 3-V to 17-V, High Efficiency and Low IQ Buck Converter Module in a MicroSiPTM Package with an Integrated Inductor

1 Features • High efficiency for wide duty cycle and load range – IQ: 4-μA typical – 62-mΩ high-side and 22-mΩ low-side RDS(ON) • 3-mm × 2.8-mm × 1.6-mm MicroSiP™ package • Up to 2-A continuous output current • ±0.9 feedback voltage accuracy across temp (–40°C to 125°C) • Configurable outp

文件：4.57597 Mbytes 页数：43 Pages

TI

德州仪器