Tone ringer IC for telephone set

The BA8206 and BA8206F are tone ringer ICs which produce a bell sound from a ringing signal. The frequency of the bell sound can be varied by changing the constants of the external resistance and capacitors. The operation initiation current dissipation can be changed at the RSL pin. Also, the outp

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ROHM

罗姆

Tone ringer IC for telephone set

The BA8206 and BA8206F are tone ringer ICs which produce a bell sound from a ringing signal. The frequency of the bell sound can be varied by changing the constants of the external resistance and capacitors. The operation initiation current dissipation can be changed at the RSL pin. Also, the output 1) Low current dissipation.\n2) Withstands up to 40V.\n3) Operation initiation current dissipation can be changed using RSL pin.\n4) Pin layout is compatible with the BA8205, BA6565A, and ML8205.\u0001Applications\n\nApplications\n   Telephones, multi-function telephones, telephone answering machine;

ROHM

罗姆

Package：8-SOIC（0.173"，4.40mm 宽）；包装：托盘 功能：音频发生器 类别：集成电路（IC） 电信 描述：IC TELECOM INTERFACE 8SOP

ROHM

罗姆

Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

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PHI

PHI

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

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MOTOROLA

摩托罗拉

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 7.0 S (typ.) ● Low leakage current: IDSS = 10 µA (ma

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TOSHIBA

东芝