N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 150mΩ ID 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

N-Channel Enhancement Mode Power MOSFET

文件：356.12 Kbytes 页数：10 Pages

CYSTEKEC

全宇昕科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

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ISC

无锡固电

100V N-Channel Enhancement Mode MOSFET

文件：405.63 Kbytes 页数：8 Pages

PANJIT

強茂