Band-switching diode

DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523V SMD package. FEATURES • Small plastic SMD package • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.2 pF • Low diode forward resistance: max. 0

文件：82.96 Kbytes 页数：5 Pages

PHI

飞利浦

Band-switching diode

FEATURES • Small plastic SMD package • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.2 pF • Low diode forward resistance: max. 0.7 Ω. APPLICATIONS • Low loss band switching in VHF television tuners. • Surface mount band-sw

文件：88.77 Kbytes 页数：5 Pages

恩XP

Band-switching diode

Overview Archived content is no longer updated and is made available for historical reference only.\nPlanar high-performance band-switching diode in a small plastic SOD523V SMD package. \n•Low diode capacitance\n•Low diode forward resistance;

恩XP

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

文件：179.2 Kbytes 页数：21 Pages

PHI

飞利浦

VHF POWER MOSFET

DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

文件：103.27 Kbytes 页数：7 Pages

ASI

VHP push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

文件：129.62 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司