丝印：B4N；Package：DFN3333-8A；N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.

文件：656.98 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：B4NK60Z；Package：I2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：731.33 Kbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

丝印：B4NK60Z；Package：D2PAK；N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure

文件：731.33 Kbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

丝印：B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37903 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.38412 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37945 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37912 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37968 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：B4NE60；Package：TO-251；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37886 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：B4NE65；Package：TO-251；4A 650V N-channel Enhancement Mode Power MOSFET

文件：1.3316 Mbytes 页数：13 Pages

WXDH

东海半导体