丝印：B3XX；Package：DFN8L；1500 – 4000 MHz High Linearity LNA

Device Features • Operated at 3.0V and 5.0V • 35.5 dBm Output IP3 at 0dBm/tone at 3500MHz • 16.4 dB Gain at 3500 MHz • 20.1 dBm P1dB at 3500MHz • 0.83 dB NF at 3500MHz • Fast shut down to support TDD systems • Green/RoHS2 Compliant DFN 8L 2x2 Package Product Description BeRex’s BLB03 is

文件：1.49134 Mbytes 页数：20 Pages

BEREX

丝印：B3XXXBE；Package：SMB；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：466.57 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B3XXXCE；Package：SMC；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：466.57 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B3XXAE；Package：SMA；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：415.35 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：B3XXAF；Package：SMAF；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：311.76 Kbytes 页数：1 Pages

DIODES

美台半导体

丝印：B3XXBE；Package：SMB；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：458.01 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B3XXCE；Package：SMC；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：458.01 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B3XXAF；Package：SMAF；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：311.76 Kbytes 页数：1 Pages

DIODES

美台半导体

丝印：B3XXBE；Package：SMB；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：458.01 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B3XXCE；Package：SMC；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：458.01 Kbytes 页数：6 Pages

DIODES

美台半导体