丝印：B33；SILICON TRANSISTOR

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR FEATURES • High-speed switching • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance • Can be used complementary to the 2SA1462. • Package: 3-pin Mini Mold (SC-59)

文件：996.29 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：B33；SILICON TRANSISTOR

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR FEATURES • High-speed switching • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance • Can be used complementary to the 2SA1610. • Small Package: 3-pin Super Small Package (SC-70)

文件：927.67 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：B3XXAF；Package：SMAF；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Fr

文件：311.76 Kbytes 页数：1 Pages

DIODES

美台半导体

丝印：B3XXBE；Package：SMB；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：458.01 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B3XXCE；Package：SMC；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

文件：458.01 Kbytes 页数：6 Pages

DIODES

美台半导体

Flexible Ultra-Low Jitter Clock Synthesizer

General Description The SM803020 is a dual-PLL clock generator that achieves ultra-low, 74.2fs_rms output jitter at 156.25MHz output frequency. It accepts a crystal input or a reference input. Each output channel is individually configurable to a differential PECL, LVDS, HCSL, or CMOS output log

文件：941.04 Kbytes 页数：14 Pages

MICREL

麦瑞半导体

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 100A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead Free Fi

文件：58.86 Kbytes 页数：3 Pages

DIODES

美台半导体

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 100A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead Free Fi

文件：97.47 Kbytes 页数：3 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Rectifiers

REVERSE VOLTAGE 20 TO 200 VOLTS FORWARD CURRENT 3.0 AMPERE Feature: * For Surface Mount Application * Metal-Semiconductor Junction With Guardring * Epitaxial Construction * Very Low Forward Voltage Drop * High Current Capability * Plastic Meterial Has UL Flammability Classification 94V-0

文件：181.94 Kbytes 页数：3 Pages

WEITRON

3 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES • For surface mounted application • Metal Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • Very Low forward voltage drop • UL recognized 94V-O plastic material • Lead solderable per MIL-STD-202 Method 208 • Surge overload rating to 100A

文件：665.92 Kbytes 页数：1 Pages

FUJI

富士通