丝印：B2D10065KS；Package：TO-220-isolated；SiC Schottky Diode

Features Ceramic package provides 2.5kV isolation Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) U

文件：600.11 Kbytes 页数：7 Pages

BASICSEMI

基本半导体

650V SiC Schottky Diode

BASiC

基本半导体

SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：1.14361 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on VF ⚫ Excellent surge current capability ⚫ Low capacitive charge Applications ⚫ Switch mode power supplies (SMPS) ⚫ Uninterruptible power suppl

文件：605.88 Kbytes 页数：7 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

文件：1.35207 Mbytes 页数：7 Pages

BASICSEMI

基本半导体