丝印：B2D04065D；Package：DFN5x6；SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：1.29717 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

丝印：B2D04065D1；Package：DFN5x6；SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

文件：1.41114 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

650V SiC Schottky Diode

BASiC

基本半导体

SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：1.19294 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：1.17846 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

4A 650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All SMC p

文件：1.62196 Mbytes 页数：8 Pages

SMCDIODE

桑德斯微电子