N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

丝印：B20N03；Package：SOP-8；MOSFET

Features - Single drive requirement. - Low on-resistance. - Fast switching characteristic. - Dynamic dv/dt rating. - Repetitive avalanche rated.

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COMCHIP

典琦

TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

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MOTOROLA

摩托罗拉

20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications

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INTERSIL

20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications

文件：76.53 Kbytes 页数：8 Pages

INTERSIL