SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

文件：101.43 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

文件：778.85 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

SWITCHMODE??Power Dual Schottky Rectifier

SWITCHMODE Power Dual Schottky Rectifier ...using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Sch

文件：78.67 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SWIRCHMODE?? Power Dual Schottky Rectifier

. . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k

文件：82.07 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Power Rectifirer

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

文件：82.34 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉