双口百兆网络隔离变压器

CND-TEK

磁联达

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

文件：126.01 Kbytes 页数：16 Pages

PHI

PHI

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

文件：126.01 Kbytes 页数：16 Pages

PHI

PHI

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

文件：260.26 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体