丝印：B1D10065F；Package：TO-263-2；SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：820.01 Kbytes 页数：7 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

文件：1.30381 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：1.41186 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

SiC Schottky Diode

Features Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Motor drive

文件：1.31235 Mbytes 页数：7 Pages

BASICSEMI

基本半导体