PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package c

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NEC

瑞萨

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

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RENESAS

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PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHINGThe 2SB1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contr • High DC current amplifier ratio\n   hFE ≥100 (VCE= −5 V, IC= −0.5 A)\n• Mold package that does not require an insulating board or insulation bushing;

Renesas

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DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUIT

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TI

德州仪器

DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUIT

文件：116.09 Kbytes 页数：7 Pages

TI

德州仪器

PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE

DESCRIPTION The µPA1453 is PNP silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount by 0.1 inch of terminal interval. • High hFE. Low VCE(sat). hFE = 100 to 400 (at IC = –2 A) VCE(sat) = –0.3 V MAX

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NEC

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