isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V • High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) • Complement to Type 2SD2083 APPLICATIONS • Designed for driver of solenoid, motor and general purpose applications.

文件：244.14 Kbytes 页数：2 Pages

ISC

无锡固电

Pressure Sensor IC

文件：1.74898 Mbytes 页数：28 Pages

ROHM

罗姆

Sensors and Bluetooth® Add-on boards for Sony Spresense

文件：606.29 Kbytes 页数：7 Pages

ROHM

罗姆

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

* Low collector-emitter saturation voltage VCE(sat) * Complementary pair with 2SA0683, 2SA0684 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684

文件：47.49 Kbytes 页数：3 Pages

PANASONIC

松下