Power Transistor

1. 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A : -160V, -1.5A2. 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A :  160V, 1.5A

ROHM

罗姆

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件：640.2 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件：640.2 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：438.98 Kbytes 页数：4 Pages

CET

华瑞