Fixed Inductors for Surface Mounting

FEATURES • 10.4mm Max. square and 4.0mm Max. height. • Magnetically shielded construction and low DC resistance. • Suitable for large current. • Ideal for DC-DC converter inductor applications in hand held personal computer etc. • RoHS compliant.

文件：48.24 Kbytes 页数：1 Pages

TOKO

Fixed Inductors for Surface Mounting

FEATURES • 10.4mm Max. square and 4.0mm Max. height. • Magnetically shielded construction and low DC resistance. • Suitable for large current. • Ideal for DC-DC converter inductor applications in hand held personal computer etc. • RoHS compliant.

文件：48.24 Kbytes 页数：1 Pages

TOKO

Fixed Inductors for Surface Mounting

FEATURES • 10.4mm Max. square and 4.0mm Max. height. • Magnetically shielded construction and low DC resistance. • Suitable for large current. • Ideal for DC-DC converter inductor applications in hand held personal computer etc. • RoHS compliant.

文件：48.24 Kbytes 页数：1 Pages

TOKO

Power Transistor

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

文件：80.41 Kbytes 页数：3 Pages

ROHM

罗姆

Medium power Transistor(-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

文件：93.7 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),complements the 2SD1758. Applications Medium power amplifier applications.

文件：757.83 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Power transistor

Features ● Low VCE(sat). ● PNP silicon transistor. ● Epitaxial planar type

文件：39.87 Kbytes 页数：1 Pages

KEXIN

科信电子

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.53 Kbytes 页数：1 Pages

TEL

Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

文件：129.36 Kbytes 页数：3 Pages

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1763 ·High breakdown voltage APPLICATIONS ·For use in low frequency power amplifer applications

文件：115.31 Kbytes 页数：3 Pages

SAVANTIC