IPU09N03LA

OptiMOS짰2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

IPU09N03LAG

OptiMOS짰2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

IPU09N03LBG

OptiMOS짰2Power-Transistor

P09N03BDC

N-Channel30-V(D-S)MOSFET

P09N03BDG

N-Channel30-V(D-S)MOSFET

PJ09N03D

25VN-ChannelEnhancementModeMOSFET

PJD09N03

25VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@30A=9mΩ •RDS(ON),VGS@4.5V,IDS@30A=12mΩ •Advancedtrenchprocesstechnology •HighDensityCellDesignForUitraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent