丝印：B080；Package：DSBGA；BQ21080 I2C Controlled, 1-Cell, 0.8-A Linear Battery Charger with Power Path and Ship Mode

1 Features • 800-mA Power path linear battery charger – 3.0-V to 5.9-V input voltage operating range optimized for battery to battery charging and USB adapter – 25-V tolerant input voltage – Configurable battery regulation voltage with 0.5 accuracy from 3.6 V to 4.65 V in 10-mV steps – 5-

文件：1.80496 Mbytes 页数：53 Pages

TI

德州仪器

丝印：B088；Package：DSBGA；BQ21088 I2C Controlled, 1-Cell, 1A Linear Battery Charger with Power Path, Ship Mode, Shutdown Mode, and Battery Tracking VINDPM

1 Features • 1A linear battery charger – 3.0V to 5.5V input voltage operating range for battery-to-battery charging and USB adapters – Configurable battery regulation voltage with 0.5% accuracy from 3.6V to 4.65V in 10mV steps – Li-ion, Li-Poly, and LiFePO4 chemistries support – 5mA t

文件：1.59914 Mbytes 页数：56 Pages

TI

德州仪器

丝印：B08C；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 140~298 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two I/O lines Low clamping voltage Working voltages: 3.3V ~ 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) 3.3V~15V IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) 24V~36V IEC61000-4-4 (EFT) 40A (5

文件：2.88396 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：B08C；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 140~298 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two unidirectional I/O lines Low Clamping Voltage Working Voltages: 3.3V~36V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2 (ESD) ±30kV (air), ±30

文件：2.5237 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：B085BM30；Package：TO-252；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Low VF ●Application Switching power supply

文件：1.89308 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：B088BM100；Package：TO-252；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Ultra Low IR ●Application Switching power supply ●Structure Silicon epitaxial planar

文件：2.04584 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：B088BM100；Package：TO-252；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Ultra Low IR ●Application Switching power supply ●Structure Silicon epitaxial planar

文件：2.04709 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：B088BM150；Package：TO-252；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Ultra Low IR ●Application Switching power supply ●Structure Silicon epitaxial planar

文件：2.0407 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：B088BM150；Package：TO-252；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Ultra Low IR ●Application Switching power supply ●Structure Silicon epitaxial planar

文件：2.04209 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：B088BM200；Package：TO-252；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Super Low IR ●Application Switching power supply

文件：1.94685 Mbytes 页数：9 Pages

ROHM

罗姆