首页 >B0530WFRH整流器件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
410mW,LowVFSMDSchottkyBarrierDiode Features ◇Lowpowerloss,highcurrentcapability,lowVF ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGond | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
410mW,LowVFSMDSchottkyBarrierDiode | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
410mW,LowVFSMDSchottkyBarrierDiode | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
0.5ASurfaceMountSchottkyBarrierRectifier Features ◇Lowpowerloss,highefficiency. ◇Highcurrentcapability,lowVF ◇Epitaxialconstruction. ◇Guardringconstructionfortransientprotection ◇Availableinleadfreeversion | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
0.5AMPSurfaceMountSchottkyBarrierRectifiers | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SurfaceMountSchottkyBarrierDiode SCHOTTKYDIODE500mAMPERS20-40VOLTS Features: *LowForwardVoltageDrop *GuardRingConstructionforTransientProtection *HighConductance MechanicalData: *Case:SOD-323 *PlasticMaterial–ULRecognitionFlammabilityClassification94V-O *Leads:SolderableperMIL-STD-202,Method | WEITRON Weitron Technology | WEITRON | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •HighConductance •TotallyLead-FreeFinish&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPA | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •LowForwardVoltageDrop •GuardRingConstructionforTransientProtection •HighConductance •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
200mW,LowVFSMDSchottkyBarrierDiode Features ◇Lowpowerloss,highefficiency. ◇Highcurrentcapability,lowVF ◇Epitaxialconstruction. ◇Guardringconstructionfortransientprotection ◇Availableinleadfreeversion | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
