BQ2005STR.B

Fast-ChargeICforDual-BatteryPacks

Features *Sequentialfastchargeandcond-i tioningoftwoNiCdorNiMHnickel cadmiumornickel-metalhydride batterypacks *HystereticPWMswitch-modecur- rentregulationorgatedcontrolof anexternalregulator *Easilyintegratedintosystemsor usedasastand-

CEM2005

DualEnhancementModeFieldEffectTransistor(NandChannel)

FEATURES ■20V,5A,RDS(ON)=32mΩ@VGS=4.5V. RDS(ON)=43mΩ@VGS=2.5V. ■-20V,-4A,RDS(ON)=95mΩ@VGS=-4.5V. RDS(ON)=125mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CFM2005S

20WATTOPENFRAMEAC-DCMODULES

CJCD2005

DualN-ChannelMOSFET

CLC2005

Dual,LowCost,2.7Vto5.5V,260MHzRail-to-RailAmplifier

GeneralDescription TheComlinearCLC2005isadual,lowcost,voltagefeedbackamplifer.Thisampliferisdesignedtooperateon+2.7V,+5V,or±2.5Vsupplies.Theinputvoltagerangeextends300mVbelowthenegativerailand1.2Vbelowthepositiverail.TheCLC2005offerssuperiordynamicperfo

CLC2005

LowCost,2.7Vto5.5V,260MHzRail-to-RailAmplifiers

GeneralDescription TheCLC1005(single),CLC1015(singlewithdisable),andCLC2005(dual)arelowcost,voltagefeedbackamplifers.Theseamplifersaredesignedtooperateon+2.7Vto+5V,or±2.5Vsupplies.Theinputvoltagerangeextends300mVbelowthenegativerailand1.2Vbelowthepositi

CMOD2005

SURFACEMOUNTHIGHVOLTAGESILICONSWITCHINGDIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMOD2005isaSiliconSwitchingDiode,manufacturedbytheepitaxialplanarprocess,epoxymoldedinaSOD-523surfacemountpackage,designedforapplicationsrequiringhighvoltagecapability. MARKINGCODE:25

CMPD2005S

SURFACEMOUNTDUAL,INSERIESHIGHVOLTAGESILICONSWITCHINGDIODES

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPD2005SandCMPD2005SGeachcontaintwo(2)HighVoltageSiliconSwitchingDiodes,manufacturedbytheepitaxialplanarprocess,epoxymoldedinaSOT-23surfacemountpackage,designedforapplicationsrequiringhighvoltagecapability. MARKINGCODES: C

CMPD2005S

SURFACEMOUNTDUAL,INSERIESHIGHVOLTAGESILICONSWITCHINGDIODES

CMPD2005S

HIGHVOLTAGESILICONSWITCHINGDIODES