BD680A

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli

BD680A

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

BD680A

PNPDARLIGNTONPOWERSILICONTRANSISTORS

PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.

BD680A

SEMICONDUCTORS

BD680A

MediumPowerLinearandSwitching

BD680AG

PlasticMedium?뭁owerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons

BD680AG

PlasticMedium-PowerSiliconPNPDarlingtons

BD680CS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

BD680CS

6.0ASCHOTTKYBARRIERDIODE

BD680CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •F