AWB7032数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

Please note: this product is being discontinued and is not recommended for new designs.

The AWB7032 is a highly linear, fully matched, poweramplifier module designed for picocell, femtocell, andcustomer premises equipment (CPE) applications. Itshigh power, efficiency, and low adjacent channel powerlevels meet the extremely demanding needs of smallcell infrastructure architectures. Designed for LTE,WCDMA, HSDPA air interfaces operating in the 2.30GHz to 2.40 GHz band, the AWB7032 delivers up to+24.5 dBm of LTE (E-TM1.1) power with an ACPR of-47 dBc. It operates from a convenient +4.2 V supplyand provides 29 dB of gain. The device is manufacturedusing an advanced InGaP HBT MMIC technologyoffering state-of-the-art reliability, temperature stability,and ruggedness. The self-contained 5 mm x 5 mm x 1mm surface mount package incorporates RF matchingnetworks optimized for output power, efficiency, andlinearity in a 50 Ω system.

特性 Features

• InGaP HBT Technology
• -47 dBc ACPR @ + 10 MHz, +24.5 dBm
• 29 dB Gain
• High Efficiency
• Low Transistor Junction Temperature
• Internally matched for a 50 Ω System
• Low Profile Miniature Surface Mount Package; Halogen Free and RoHS Compliant
• Multi-Carrier Capability

简介

AWB7032属于RF/IF射频/中频RFID的射频放大器。由制造生产的AWB7032射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。