BAV101

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives

BAV101

SuperfastSwitchingSurfaceMountSi-Diodes

BAV101

Ultrafastsiliconrectifierdiodes

BAV101

500mWHermeticallySealedGlassHighVoltageSwitchingDiodes

Features ●—HighVoltageSwitchingDevice —●MiniMelfpackage —●Surfacedevicetypemounting —●Hermeticallysealedglass —●Compressionbondedconstruction —●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable —●RoHScompliant —●MatteTin(Sn

BAV101

SMALLSIGNALSWITCHINGDIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams

BAV101

SmallSignalSwitchingDiodes,HighVoltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

BAV101

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

BAV101

SmallSignalDiodes

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ​​​​​​​•MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi

BAV101

SILICONEPITAXIALPLANARDIODES

SILICONEPITAXIALPLANARDIODES HighVoltageGeneralPurposeDiodes

BAV101

HIGHSPEEDSWITCHINGDIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH