BAV100

500mWHermeticallySealedGlassHighVoltageSwitchingDiodes

Features ●—HighVoltageSwitchingDevice —●MiniMelfpackage —●Surfacedevicetypemounting —●Hermeticallysealedglass —●Compressionbondedconstruction —●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable —●RoHScompliant —●MatteTin(Sn

BAV100

SmallSignalSwitchingDiodes,HighVoltage

Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications  •Generalpurposes

BAV100

HIGHSPEEDSWITCHINGDIODES

FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH

BAV100

SurfaceMountSmallSignalSwitchingDiode