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AUIRLR014N

Advanced Planar Technology Logic-Level Gate Drive

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件:209.42 Kbytes 页数:12 Pages

IRF

AUIRLR014N

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件:411.28 Kbytes 页数:10 Pages

Infineon

英飞凌

AUIRLR014NTR

Advanced Planar Technology Logic-Level Gate Drive

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件:209.42 Kbytes 页数:12 Pages

IRF

AUIRLR014NTRL

Advanced Planar Technology Logic-Level Gate Drive

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件:209.42 Kbytes 页数:12 Pages

IRF

AUIRLR014NTRL

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件:411.28 Kbytes 页数:10 Pages

Infineon

英飞凌

AUIRLR014NTRR

Advanced Planar Technology Logic-Level Gate Drive

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件:209.42 Kbytes 页数:12 Pages

IRF

AUIRLR014N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

\n优势:\n• Advanced planar technology\n• Dynamic dV/dT rating\n• 175°C operating temperature\n• Fast switching\n• Fully Avalanche Rated\n• Repetitive avalanche allowed up to Tjmax\n• Lead free, RoHS compliant\n• Automotive qualified;

Infineon

英飞凌

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
TO-252
7793
支持大陆交货,美金交易。原装现货库存。
询价
Infineon Technologies
21+
D-PAK(TO-252AA)
3000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON
25+
TO-252
3675
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
493
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
询价
IR
18+
TO-252
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
Infineon Technologies
2022+
TO-252-3,DPak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IR
23+
TO-252
12800
公司只有原装 欢迎来电咨询。
询价
更多AUIRLR014供应商 更新时间2025-12-26 13:44:00