| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AUIRFZ44Z | HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：333.58 Kbytes 页数：14 Pages | IRF | IRF | |
AUIRFZ44Z | Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：718.94 Kbytes 页数：12 Pages | INFINEON 英飞凌 | INFINEON | |
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：333.58 Kbytes 页数：14 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：718.94 Kbytes 页数：12 Pages | INFINEON 英飞凌 | INFINEON | ||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：333.58 Kbytes 页数：14 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：333.58 Kbytes 页数：14 Pages | IRF | IRF | ||
AUIRFZ44Z | Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package \n优势:\n• Advanced process technology\n• Ultra-low on-resistance\n• 175°C operating temperature\n• Fast switching\n• Repetitive avalanche allowed up to Tjmax\n• Lead free, RoHS compliant\n• Automotive qualified; | Infineon 英飞凌 | Infineon | |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package \n优势:\n• Advanced process technology\n• Ultra-low on-resistance\n• 175°C operating temperature\n• Fast switching\n• Repetitive avalanche allowed up to Tjmax\n• Lead free, RoHS compliant\n• Automotive qualified; | Infineon 英飞凌 | Infineon |
技术参数
- VDS max：
55.0V
- ID max：
36.0A
- ID (@ TC=100°C) max：
36.0A
- ID (@ TC=25°C) max：
51.0A
- RDS (on)(@10V) max：
13.9mΩ
- QG(typical) ：
29.0nC
- Mounting ：
THT
- Polarity ：
N
- Qgd ：
12.0nC
- Tj max：
175.0°C
- VGS max：
20.0V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
Infineon(英飞凌) |
2447 |
TO-220 |
115000 |
1000个/管一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
INFINEON |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon/英飞凌 |
25+ |
TO-220 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
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