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AUIRFZ44N

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET

文件:179.89 Kbytes 页数:11 Pages

IRF

AUIRFZ44N

Advanced Planar Technology

文件:325.99 Kbytes 页数:9 Pages

INFINEON

英飞凌

AUIRFZ44NL

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET

文件:279.28 Kbytes 页数:13 Pages

IRF

AUIRFZ44NS

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET

文件:279.28 Kbytes 页数:13 Pages

IRF

AUIRFZ44NSTRL

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET

文件:279.28 Kbytes 页数:13 Pages

IRF

AUIRFZ44NSTRR

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET

文件:279.28 Kbytes 页数:13 Pages

IRF

AUIRFZ44NL

Dynamic dV/dT and dI/dT capability

文件:643.87 Kbytes 页数:11 Pages

INFINEON

英飞凌

AUIRFZ44NS

Dynamic dV/dT and dI/dT capability

文件:643.87 Kbytes 页数:11 Pages

INFINEON

英飞凌

AUIRFZ44N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package

\n优势:\n• Advanced planar technology\n• Dynamic dV/dT rating\n• 175°C operating temperature\n• Fast switching\n• Fully Avalanche Rated\n• Repetitive avalanche allowed up to Tjmax\n• Lead free, RoHS compliant\n• Automotive qualified;

Infineon

英飞凌

AUIRFZ44NS

Power-MOSFET-20V-800V Automotive MOSFET-50V-80V N-Channel Automotive MOSFET

Infineon

英飞凌

技术参数

  • VDS max:

    55.0V

  • ID (@ TC=100°C) max:

    35.0A

  • ID  max:

    35.0A

  • ID (@ TC=25°C) max:

    49.0A

  • RDS (on)(@10V) max:

    17.5mΩ

  • QG(typical) :

    42.0nC 

  • Mounting :

    THT

  • Polarity :

    N

  • Qgd :

    15.3nC 

  • Tj max:

    175.0°C

  • VGS max:

    20.0V

供应商型号品牌批号封装库存备注价格
Infineon
24+
NA
3000
进口原装正品优势供应
询价
IR
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
Infineon
1931+
N/A
596
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON/英飞凌
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INFINEON
25+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
596
加我QQ或微信咨询更多详细信息,
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
Infineon Technologies
22+
TO2203
9000
原厂渠道,现货配单
询价
INFINEON TECHNOLOGIES AG
2118+
原厂封装
6800
公司现货全新原装假一罚十特价
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
更多AUIRFZ44N供应商 更新时间2026-1-31 14:16:00