Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package

\n优势:\n• Advanced process technology\n• Ultra-low on-resistance\n• 175°C operating temperature\n• Fast switching\n• Repetitive avalanche allowed up to Tjmax\n• Lead free, RoHS compliant\n• Automotive qualified;

Infineon

英飞凌

Advanced Process Technology New Ultra Low On-Resistance

文件：357.08 Kbytes 页数：14 Pages

IRF

Advanced Process Technology, New Ultra Low On-Resistance

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：289.18 Kbytes 页数：13 Pages

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

文件：697.79 Kbytes 页数：12 Pages

INFINEON

英飞凌

96 KHZ DIGITAL AUDIO INTERFACE TRANSMITTER

General Description The CS8405A is a monolithic CMOS device which encodes and transmits audio data according to the AES3, IEC60958, S/PDIF, or EIAJ CP1201. The CS8405A accepts audio and digital data, which is then multiplexed, encoded, and driven onto a cable. The audio data is input through a c

文件：739.62 Kbytes 页数：36 Pages

CIRRUS

凌云逻辑