HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

文件：291.87 Kbytes 页数：12 Pages

IRF

Ultra Low On-Resistance

文件：291.87 Kbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

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汽车Q101 75V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-247AC 封装

\n优势:\n• 先进加工技术\n• 超低导通电阻\n• 175°C 的工作温度\n• 快速开关\n• 允许重复雪崩达到 Tjmax\n• 无铅，符合 RoHS\n• 通过汽车认证;

Infineon

英飞凌

Amplifier Transistor PNP Silicon

Amplifier Transistor PNP Silicon

文件：205.63 Kbytes 页数：4 Pages

AVICTEK

PNP Switching Transistor

VOLTAGE 60 Volts CURRENT 0.6 Ampere FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=60V) . * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Telephony and prof

文件：117.26 Kbytes 页数：6 Pages

CHENMKO

力勤

PNP Switching Transistor

VOLTAGE 60 Volts CURRENT 0.6 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=60V) . * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Telephony a

文件：118.42 Kbytes 页数：6 Pages

CHENMKO

力勤