HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

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IRF

AUTOMOTIVE GRADE

文件：695.32 Kbytes 页数：8 Pages

INFINEON

英飞凌

Low On-Resistance

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Automotive Q101 24V Single N-Channel HEXFET Power MOSFET in a TO-247AD Package

\n优势:\n• Advanced process technology\n• Ultra-low on-resistance\n• 175°C operating temperature\n• Fast switching\n• Repetitive avalanche allowed up to Tjmax\n• Lead free, RoHS compliant\n• Automotive qualified;

Infineon

英飞凌