HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that

文件：217.49 Kbytes 页数：12 Pages

IRF

Low on-resistance

文件：217.49 Kbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

汽车 Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 Super 220 封装

\n优势:\n• 先进平面工艺\n• 动态的dv/dt额定值\n• 175°C 的工作温度\n• 快速开关\n• 完全雪崩额定值\n• 允许重复雪崩达到 Tjmax\n• 无铅，符合 RoHS\n• 通过汽车认证;

Infineon

英飞凌

HEXFET짰 Power MOSFET

文件：228.78 Kbytes 页数：12 Pages

IRF

Guards against accidental disconnection of Computers, PDU’s, Servers and most Network Devices.

文件：5.42821 Mbytes 页数：7 Pages

BURLAND

LCD EMI Filter Array with ESD Protection

文件：957.79 Kbytes 页数：11 Pages

CALMIRCO