AUIRF7319Q中文资料IRF数据手册PDF规格书

Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Features

• Advanced Planar Technology

• Low On-Resistance

• Logic Level Gate Drive

• Dual N and P Channel MOSFET

• Surface Mount

• Fully Avalanche Rated

• Automotive[Q101] Qualified *

• Lead-Free, RoHS Compliant