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AUIRF1405ZS中文资料IRF数据手册PDF规格书
AUIRF1405ZS规格书详情
描述 Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
特性 Features
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified *
产品属性
- 型号：
AUIRF1405ZS
- 功能描述：
MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
13871 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
Infineon(英飞凌) |
24+ |
D2PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
IR |
25+ |
TO-263 |
100 |
原装正品,欢迎来电咨询! |
询价 | ||
Infineon/英飞凌 |
23+ |
D2PAK |
12700 |
买原装认准中赛美 |
询价 | ||
IR |
13+ |
TO-263 |
6030 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
45000 |
十年专营原装现货,假一赔十 |
询价 | |||
IR |
13+ |
TO-263 |
6870 |
询价 | |||
IR |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 | ||
Infineon/英飞凌 |
21+ |
D2PAK |
6820 |
只做原装,质量保证 |
询价 | ||
I |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
