AUIRF1405中文资料IRF数据手册PDF规格书
AUIRF1405规格书详情
描述 Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
产品属性
- 型号：
AUIRF1405
- 功能描述：
MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
22800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
25+ |
TO-220 |
22800 |
原装正品,欢迎来电咨询! |
询价 | ||
Infineon/英飞凌 |
24+ |
D2PAK-7 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
Infineon/英飞凌 |
21+ |
D2PAK-7 |
6820 |
只做原装,质量保证 |
询价 | ||
Infineon/英飞凌 |
24+ |
D2PAK-7 |
25000 |
原装正品,假一赔十! |
询价 | ||
IR |
13+ |
TO-263 |
6870 |
询价 | |||
INFINEON |
21+ |
TO-220 |
52005 |
原装现货假一赔十 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
45000 |
十年专营原装现货,假一赔十 |
询价 | |||
IR |
23+ |
TO-263 |
28000 |
原装正品 |
询价 | ||
IR |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 |
