ATTINY2313V

8-bitMicrocontrollerwith2KBytesIn-SystemProgrammableFlash

TheATtiny2313isalow-powerCMOS8-bitmicrocontrollerbasedontheAVRenhancedRISCarchitecture.Byexecutingpowerfulinstructionsinasingleclockcycle,theATtiny2313achievesthroughputsapproaching1MIPSperMHzallowingthesystemdesignertooptimizepowerconsumptionversusprocess

ATTINY2313V

AVR??High-performanceandLow-powerRISCArchitecture

BT2313M

6AFour-quadranttriacs

Generaldescription Passivatedtriacsinafullpack,plasticpackageintendedforuseinapplicationsrequiringhighbidirectionaltransientandblockingvoltagecapabilityandthermalcyclingperformance. Featuresandbenefits ■Isolatedpackage ■HighITSM Applications ■Lampdimmers ■H

CAS-2313

FixedDomeIPNetworkCamera

CAS-2313

VarifocalDomeIPNetworkCamera

CAS-2313

FixedDomeIPNetworkCamera

CAS-2313

PanoramicDomeIPNetworkCamera

CEH2313

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CES2313

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2313A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.8A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=86mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.