RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats in

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freescaleFreescale Semiconductor, Inc

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RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

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N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

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RF LDMOS Wideband Integrated Power Amplifiers

文件：1.22311 Mbytes 页数：28 Pages

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RF Power Field Effect Transistors

文件：437.63 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

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RF Power Field Effect Transistor

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freescaleFreescale Semiconductor, Inc

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RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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freescaleFreescale Semiconductor, Inc

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RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

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RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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freescaleFreescale Semiconductor, Inc

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RF LDMOS Wideband Integrated Power Amplifiers

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