ATC100B5R6BT250XT中文资料飞思卡尔数据手册PDF规格书

RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD-SCDMA.

Typical Performance

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts,

IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., Full Frequency Band

(2110-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @

0.01 Probability on CCDF.

Power Gain — 30 dB

Power Added Efficiency — 14

ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power

• Pout @ 1 dB Compression Point = 40 Watts CW

• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 Watts CW Pout.

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1)

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.